Abstract 17 June 2015

Atomic-Resolution Electron Spectroscopy of Interfaces Phases Realized In Oxides Heterostructures

David A. Muller, Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY

Electron energy loss spectroscopy (EELS) in a new generation of aberration-corrected electron microscopes provides direct images of the local physical and electronic structure inside a material at the atomic scale.  The sensitivity and resolution can extend to imaging single dopant atoms or vacancies in their native environments.  The detection and control of interface defects using EELS, closely-coupled with atomically-precise growth methods, has enabled the realization of interface-stabilized emergent ground states, including 2D metals, superconductors and now magnets and a room-temperature ferroelectric ferrimagnet.  In each case, the detection and control of defects has proven crucial to distinguishing between intrinsic and extrinsic interface effects and provides a natural classification for understanding a system’s response within the framework of the polar catastrophe.



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