AC Dielectric

Apparatus

    

AC450 No. 16

Supplier

 

Alliance Concept

Location

 

P.00.330

Main purpose

 

Sputter deposition

System layout

 

RF magnetron sputter deposition (4x 4 inch target)

RF sputter etching

 

Gasses

 

Ar, N2, O2

Power supply

 

600W Huttinger RF source for deposition

300 W Huttinger RF source for sputter etch

 

Process information

 

“standard” materials: Si3N4, SiO2, HfO2, Al2O3

available on request: AlN

 

Facilities

 

static and dynamic deposition

reactive sputtering (N2 and O2)

RGA to analyze background pressure of process chamber

 

Specimen

 

max. 100mm wafers, small pieces allowed

Equipment owner

 

Marinus Fischer

m.fischer@tudelft.nl

+31 628906207

 

Bas van Asten (back-up)

b.vanasten@tudelft.nl

+31 642481091